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1. Introduction
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Fabrication and characterization of
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Fabrication and characterization of
Contents
1. Introduction
1.1 Objectives of the dissertation
1.2 Outline of the dissertation
2. Device Physics / Theoretical basis
2.1 Theory of the Gunn effect
2.1.1 History
2.1.2 The transferred-electron effect and the domain formation
2.1.3 Domain Dynamics
2.1.4 The small signal behaviour of a transferred-electron device
2.2 Gunn diode with hot electron injectors
2.2.1 Metal semiconductor Schottky contact injector
2.2.2 Graded gap injector
2.2.3 Resonant tunneling injector
2.3 Gunn diode based oscillators
2.3.1 Theory of two-port networks
2.3.2 Negative differential conductance oscillators
2.3.3 Gunn oscillation modes
2.4 The thermal behaviour of a Gunn diode
2.4.1 Analytical solution of the simplified static heat transfer problem
2.4.2 Finite elemente simulations of the temperature distributions in a Gunn diode
3. III-V compound semiconductor material systems
3.1 Group-III/As and group-III/N material systems
3.1.1 GaAs, AlAs
3.1.2 GaN, AlN
3.2 GaAs, AlAs grown by MBE
3.3 GaAs Gunn diode structures
3.3.1 Graded Gap injector GaAs Gunn diodes
3.3.2 Resonant tunneling injector GaAs Gunn diodes
3.4 GaN grown by MOVPE
3.5 GaN Gunn diode structures
4. Experimental Methods
4.1 Atomic Force Microscope (AFM)
4.2 Scanning Electron Microscope (SEM)
4.3 Hall measurements
4.4 Capacitance-Voltage measurements
4.5 TLM and CLM
4.6 Short pulse DC measurements
4.7 S-parameters measurements
4.7.1 Network Analyzer Measurement systems
4.7.2 Displaying data: Smith Chart
5. Technology
5.1 Mesa etching
5.1.1 ECR-RIE of GaAs/AlGaAs mesa.
5.1.2 ECR-RIE of GaN mesa
5.1.3 GaN nanocolumns: a topdown approach.
5.2 Ohmic contacts
5.3 Electrical isolation of the single Gunn diodes
5.4 Polyimide planarization / passivation
5.5 Deposition of the bond-pads and of the oscillator passive elements
5.6 Air-bridge interconnection (optional step).
6. Experimental results and discussion
6.1 Gunn diode direct current behavior
6.1.1 Contacts
6.1.2 I-V characteristics of graded gap injector GaAs Gunn diodes
6.1.3 Temperature dependant DC modelling of graded gap injector GaAs Gunn diodes
6.1.4 I-V characteristics of resonant tunnelling injector GaAs Gunn diodes
6.1.5 I-V characteristics of GaN Gunn diodes
6.1.6 pulse measurements: heat effects evidences
6.2 Gunn diode high frequency behaviour
6.2.1 Impedance measurements up to 50MHz
6.2.2 High frequencies investigations of GaAs Gunn diodes
6.2.3 Drift velocity computation and operation mode classification
6.2.4 Estimation of the and L-valley occupation
6.2.5 Temperature dependance of the drift velocity
6.3 Gunn diode based oscillators
6.3.1 The Gunn diode cavity oscillator
6.3.2 The planar low pass filter
6.3.3 The planar resonant circuit
6.3.4 The monolithic integrated voltage-controlled Gunn oscillator
7. Conclusions
8. Zusammenfassung
A. Mask layout
B. Properties of semiconductors and table of elements
C. Process parameters
C.1 Cleaning process
C.2 Lithography processes
C.3 Wet-chemical etching processes
C.4 Plasma-etching processes
C.5 Metallization processes
List of Figures
List of Tables
Bibliography
D. Acknowledgement
simone montanari 2005-08-02
